Antiferroelectric lead zirconate (PbZrO3) films derived from acetate precursors have been fabricated on Pt/Ti-coated silicon wafers and fused silica at 700 degrees C with an automatic dip-coating process. Films formed directly on the metallized silicon wafer showed the coexistence of perovskite and pyrochlore phases. A pre-coated titania layer of about 10 nm coexistence of perovskite and facilitated the formation of the desired perovskite phase. Films deposited on fused silica exhibited interactions between lead and silica which inhibited the crystallization of the films. In this case, a pre-coated titania layer in the range 50-75 nm acted as a diffusion barrier layer, allowing the formation of the perovskite phase. Antiferroelectricity in the films was confirmed by X-ray superstructure, dielectric double hysteresis loops and d.c. bias behaviour at room temperature. The corresponding transverse electro-optic properties were also measured films deposited on fused silica.