The consolidation of transition metal and silicon is formed various phase transition metal silicide by d-orbital of transition metal, and there exists two main stable phase for FeSi₂ the semiconducting β-phase with orthorhombic structure and the metallic α-phase with tetragonal symmetry. Iron Silicide thin layer have been grown on silicon by rf-plasma CVD method in the variables of plasma. In this paper, we have been convinced of forming the iron silicide layers at 6.4eV and 1.5eV by XRF(X-ray Fluoroscence) and the amorphous silicons(a-Si:H) at 600∼700cm^-1 by FT-IR.