Thin films of ZnSexCdS1-x (t similar to 0.6 mu m) over the entire range of x, were deposited on glass substrates at two temperatures, T-s (350 and 470 K) by vacuum evaporation. X-ray diffraction studies showed that all the films were polycrystalline in nature. Films prepared at 470 K were nearly stoichiometric. Grain size increased with substrate temperature, T-s. The electrical conductivity and Hall measurements were carried out by d.c. van der Pauw technique. Hall effect studies/hot probe test showed that all the films were of n-type conductivity. Hall mobility increased with T-s. In addition, mobilities increased with temperature in films of ail compositions, indicating the dominance of grain-boundary scattering. Grain-boundary potentials were in range 0.03-0.06 eV.