Electrical conductivity and thermoelectric power measurements have been performed on n-type MoTe2-single crystals in a wide temperature range (125-770 K). Stoichiometric samples were prepared by vapour transport with bromine as transport reagent. The experimental results which have been performed along a direction perpendicular to the c-axis, are analysed with the model already used for p-type MoTe2-x single crystals grown in a molten tellurium bath without any contaminating reagent. A bromine donor level which is located near the bottom of the conduction band is found and takes into account all the new experimental results. The semiconductor is compensated and the random potential due to the charged lacunar sites and bromine impurities induces a broadening of this level into a narrow band for the compound with the larger tellurium depletion. This band contributes to the conduction in the form of thermally activated hopping. The schematic band structure deduced from transport measurements is in good agreement with the electronic band structure of the group VI transition metal dichalcogenides with trigonal prism coordination.