Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures similar to 773 K and above showed zinc blende structure, increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak similar to 725 nm (similar to 1.71 eV) and similar to 803 nm (similar to 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at similar to 151 cm(-1) followed by two peaks located at similar to 71 cm(-1) and similar to 116 cm(-1) were also observed. (C) 2015 Elsevier B.V. All rights reserved.