The (Cd-0.9, Mn-0.1)Te crystal was grown by the Traveling Heater method (THM) from the indium-doped source ingot (Cd-0.9, Mn-0.1)Te which had been synthesized by the Vertical Bridgman (VB) method. The indium-doped (Cd-0.9, Mn-0.1)Te single crystal with the diameter of 31 mm and length of 130 mm was obtained. The variation of the Mn content was about +/- 1% along the length of (Cd, Mn)Te: In ingot, and the concentration of Te inclusions in the crystal was similar to 10(4) cm(-3) with the average diameter of 8-12 mu m. Te solvent showed purifying effects during the THM crystal growth, and the indium dopant distributed along the crystal with the concentration of 6.8-10 ppm. IR transmittance and PL spectrum measurements revealed that the as grown (Cd, Mn)Te crystal possessed high crystalline quality, and its resistivity was up to 6.2 x 10(9) Omega cm. Under the 59.5 keV(241)Am irradiation, the planar (Cd, Mn)Te detector showed an energy resolution of 12.7%. (C) 2015 Elsevier B.V. All rights reserved.