MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)

Hoshi T; Kashio N; Sugiyama H; Yokoyama H; Kurishima K; Ida M; Matsuzaki H; Kohtoku M; Gotoh H

Journal of Crystal Growth, Vol.424, 80-80, 2015

DOI10.1016/j.jcrysgro.2015.05.001 Export Citation

MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)

Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H