It is demonstrated that the threading dislocation density in GaN is considerably reduced by Facet Assisted Epitaxial Lateral Overgrowth (FACELO) on a hexagonal honeycomb grid structure. We observed a more isotropic strain and curvature development in the GaN layer by such a mask geometry. Here, we describe how to achieve a nearly dislocation-free surface by a Fairly complex variation of the epitaxial growth parameters. Eventually, dislocation analysis of epitaxially grown GaN using an HCI vapor phase etching process resulted in dislocation densities below 10(6) cm(-2). (c) 2015 Elsevier B.V. All rights reserved.