Separation and purification of the Si crystal during solidification process of hypereutectic Al-30Si melt under traveling magnetic field (TMF) were investigated in the present study. The results showed that under a proper condition the Si-rich layer can be formed in the periphery of the ingot while the inner microstructure is mainly the Al-Si eutectic structure. The intense melt flow carries the bulk liquid with higher Si content to promote the growth of the primary Si phase which is first precipitated close to the inner wall of the crucible with a relatively lower temperature, which resulting in the remarkable segregation of the primary Si phase. The impurity contents of the refined Si can be reduced to a very low level. The typical metallic impurities have removal fraction higher than 99.5%. In addition, there is a significant difference in the P contents between the primary and eutectic Si phases, which might be ascribed to the formation of AlP phase that acts as the heterogeneous nucleation sites. Furthermore, a considerable amount of Fe-containing particles with a size about 100-300 nm is found inside the eutectic Si phase, indicating an unintended entrapment of Fe in Si. (c) 2015 Elsevier B.V. All rights reserved