This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1 x 3) and c(2 x 2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1 x 3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb-4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 degrees C to 380 degrees C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 degrees C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities. (C) 2015 Published by Elsevier B.V.