Journal of Crystal Growth, Vol.437, 53-58, 2016
Growth and characterization of CdMnTe by the vertical Bridgman technique
We grew Cd1-xMnx Te crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The structural quality of the crystal was evaluated by white beam X-ray topography in the National Synchrotron Light Source (NSLS) facility at Brookhaven National Laboratory (BNL). We observed that the crystal was free from a sub-grain boundary network, as revealed by X-ray topography and verified by our etching study. The concentration of the secondary phases, averaged over the entire ingot, was 2-3 times lower than in conventional Bridgman grown cadmium zinc telluride (CZT) crystals. (C) 2016 Elsevier B.V. All rights reserved.
Keywords:Characterization;Extended defects;Sub-grain boundary network;Bridgman;CdMnTe;Semiconducting II-VI materials