The Y2O3 films were deposited on biaxially textured Ni-5%W (NiW) substrates at different substrate temperatures (Ts). The microstructures of the Y2O3 films were characterized by X-ray diffraction (XRD) 020 scans and omega-scans. The Y2O3 lattice parameters and residual stress were measured and calculated by high -resolution reciprocal space mapping (HR-RSM). Results showed that the Y2O3 films deposited on the NiW substrate exhibited different growth mechanisms at different Ts. At a low temperature range, the Y2O3 films grew via the tilt growth mechanism. The Y2O3 film grown at T-s=620 degrees C exhibited the highest residual stress and sharpest out-of-plane texture. With the increase in Ts, the growth mechanism changed to the epitaxial growth mechanism. At T-s=720 degrees, the Y2O3 underwent epitaxial growth on the NiW substrates, and the out-of-plane textures of Y2O3 and NiW were almost identical. (C) 2015 Elsevier B.V. All rights reserved.