Supercritical fluid chemical deposition, frequently abbreviated SFCD, is a thin film deposition technique that employs supercritical fluids. In this deposition technique, a thin film is synthesized from a precursor dissolved in a fluid, along with a reaction reagent if necessary. This paper proposes a novel wafer-scale tool for SFCD. The reactor has a flat cylindrical interior, and the fluid is supplied at the center of the upper face. A porous plate is placed on the bottom face, at the center of which a small fluid outlet is opened. A wafer is placed directly on the porous plate without a holding device, and the diameter of the porous plate is slightly larger than that of the wafer. This reactor has a minimal interior volume and realizes radial and unidirectional flow over the entire wafer. Furthermore, the in-plane pressure distribution is completely uniform, allowing a uniform flow distribution, which was verified by computational fluid dynamics simulations. Cu films were deposited on a 100 mm silica glass wafer using Cu(C9H12O2)(2)(Cu(dibm)(2)) as a precursor. The average thicknesses were 75 nm at 185 degrees C and 182 nm at 200 degrees C,and the standard deviations were 19 nm and 14 nm, respectively. Basic film characterization was also performed. (C) 2015 Elsevier B.V. All rights reserved.