Titanium disilicide were fabricated by thermal annealing after being codeposited a-Si:H/Ti thin films. Titanium diffused internally to the dangling bond which was formed with depositing a-Si:H and desorbing the hydrogen of a-Si:H during annealing. The total hydrogen content and dangling bond in the a-Si:H films effect the properties of titanium disilicide. We studied about the characteristics of TiSi₂ films for the total gydrogen content and dangling bond. Also, it correlated to the crystallization of titanium disilicide.