We report the electrodeposition of germanium from supercritical difluoromethane (sc-CH2F2) at 19 MPa and 358 K using [(NBu4)-Bu-n][GeCl3]. Voltammetry shows a classic nucleation loop on the first anodic scan with a high nucleation overpotential for germanium on TiN. In all cases the deposition appears to be kinetically limited by a coupled, potential independent, chemical step. Films of germanium were deposited at a range of potentials. At high overpotentials the films were dendritic and poorly adherent. At lower overpotentials, below -2 V vs. Ag vertical bar LaF3, the films are smoother and more homogeneous. Analysis of the films by energy dispersive X-ray (EDX) spectroscopy shows the presence of germanium with some chloride impurity. Raman spectroscopy confirms the deposition of amorphous germanium. Plating by pulsing to -1.9 V vs. Ag vertical bar LaF3 for 100 ms and then growth at -1.5 V vs. Ag vertical bar LaF3, was found to produce the best films On annealing at 700 degrees C under an Ar atmosphere for 1 hour the as-deposited amorphous germanium film is converted into crystalline germanium, as determined by X-ray diffraction (XRD) and Raman spectroscopy. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under. the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: [email protected]. All rights reserved.