The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2-77 K, and in fields, with induction up to 14T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T-1, cyclotron effective mass of electrons m(c) approximate to 0.14m(o), concentration of charge carriers 2.3 x 10(17) cm(-3),g-factor g* approximate to 30 and Dingle temperature T-D = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 x 10(17) cm(-3), are considered. The temperature dependences of electron mobility in the range 4.2-500 K were calculated. (C) 2015 Published by Elsevier Ltd.