Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.14, No.3, 164-166, 1995 DOI10.1007/BF00318243 Export Citation Electrical Characteristics of Hg1-xCdxTe (X = 0.1 to 0.8) Grown on GaAs(100) by an Interdiffused Multilayer Process Faith M, Leech PW, Frost C Keywords:CHEMICAL-VAPOR-DEPOSITION;HGTE-CDTE SUPERLATTICES;PHASE EPITAXY;GAAS;LAYERS;HGCDTE Please enable JavaScript to view the comments powered by Disqus.
