Cryogenic aerosol cleaning is a dry cleaning method used in the back end of line (BEOL) semiconductor manufacturing to remove defects from planar hydrophobic surfaces such as SiCOH and SiCxNyHz. Cryogenic aerosol cleaning is preferred over conventional wet cleaning methods as it is a non-contact cleaning method, which uses inert gases to generate sub-micrometer-sized solid aerosol particles that physically remove nanometer-sized contaminants on wafer surfaces. Particle removal mechanism involves detachment of the particles upon impact with aerosol, diffusion, and finally entrainment away from the wafer. In BEOL metal line patterning, particles on the dielectric isolation surfaces translate through the subsequent lithography and copper fill steps in to single or multiple metal line open defects that are yield killers. In this study, we show that the particle removal performance of the standard aerosol cleaning can be enhanced by pre-heating the wafer and use of a higher molecular weight inert gas, namely Ar, for aerosol generation. Both the addition of a Pre-heat step and the use of Ar as the aerosol source showed 47-52% reduction in single and multiple line opens detected through wafer electrical tests during high volume semiconductor manufacturing process.