In this paper, an integrated double boost SEPIC (IDBS) converter is proposed as a high step-up converter. The proposed converter utilizes a single controlled power switch and two inductors and is able to provide high voltage gain without extreme switch duty-cycle. The two inductors can be coupled into one core for reducing the input current ripple without affecting the basic DC characteristic of the converter. Moreover, the voltage stresses across all the semiconductors are less than half of the output voltage. The reduced voltage stress across the power switch enables the use of a lower voltage and RDS-ON MOSFET switch, which will further reduce the conduction losses. Whereas, the low voltage stress across the diodes allows the use of Schottky rectifiers for alleviating the reverse-recovery current problem, leading to a further reductiori in the switching and conduction losses. A detailed circuit analysis is performed to derive the design equations. A design example for a 100-W/240 V-dc with 24 V-dc input voltage is provided. The feasibility of the converter is confirmed with results obtained from simulation and an experimental prototype. (C) 2014 Elsevier Ltd. All rights reserved.