Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.15, No.3, 189-191, 1996 DOI10.1007/BF00274447 Export Citation Studies on Deep Levels in GaAs Epilayers Grown on Si by Metal-Organic Chemical-Vapor-Deposition .4. 0.96 eV Photoluminescence Emission Liang JC, Zhao JL, Gao Y, Dou K, Huang SH, Yu JQ, Gao HK Keywords:SEMI-INSULATING GAAS;EPITAXIAL GAAS;DEFECTS Please enable JavaScript to view the comments powered by Disqus.
