We report for the first time a quantum mechanical simulation study of gate capacitance components in aggressively scaled InAs Nanowire Tunnel Field-Effect Transistors. It will be shown that the gate-drain capacitance exhibits the same functional dependence over the whole V-gs range as the total gate capacitance, albeit with smaller values. However, as opposed to the previous capacitance estimations provided by semiclassical TCAD tools, we find that the gate capacitance exhibits a non-monotonic behavior vs. gate voltage, with plateaus and bumps related with energy quantization and subband formation determined by the device cross-sectional size, as well as with the position of channel-conduction subbands relative to the Fermi level in the drain contact. From this point of view, semiclassical TCAD tools seem to be inaccurate for capacitance estimation in aggressively-scaled TFET devices. (C) 2015 Elsevier Ltd. All rights reserved.