Solid-State Electronics, Vol.112, 37-45, 2015
Consistent low-field mobility modeling for advanced MOS devices
In this paper we develop several extensions to semi-classical modeling of low-field mobility, which are necessary to treat planar and non-planar channel geometries on equal footing. We advance the state-of-the-art by generalizing the Prange-Nee model for surface roughness scattering to non-planar geometries, providing a fully numerical treatment of Coulomb scattering, and formulating the Kubo-Greenwood mobility model in a consistent, dimension-independent manner. These extensions allow meaningful comparison of planar and non-planar structures alike, and open the door to evaluating emerging device concepts, such as the FinFET or the junction-less transistor, on physical grounds. (C) 2015 Elsevier Ltd. All rights reserved.
Keywords:FinFET - Junction-less transistor;Surface roughness scattering;Linearized Boltzmann transport equation;Kubo-Greenwood transport formalism;Electron mobility;Semiconductor device simulation