Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Morita Y; Mori T; Migita S; Mizubayashi W; Fukuda K; Matsukawa T; Endo K; O'uchi S; Liu YX; Masahara M; Ota H

Solid-State Electronics, Vol.113, 173-178, 2015

DOI10.1016/j.sse.2015.05.031 Export Citation

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Morita Y, Mori T, Migita S, Mizubayashi W, Fukuda K, Matsukawa T, Endo K, O'uchi S, Liu YX, Masahara M, Ota H

We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). The interface between epitaxially grown channel and source surface was used as tunnel junctions. Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improved the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improved step-by-step with interface quality. (C) 2015 Elsevier Ltd. All rights reserved.