Surface-potential-based mathematical models are among the most accurate and physically based compact models of Thin-Film Transistors (TFTs) and, in turn, of Organic Thin-Film Transistors (OTFTs), available today. However, the need for iterative computations of the surface potential limits their computational efficiency and diffusion in CAD applications. The existing closed-form approximations of the surface potential are based on regional approximations and empirical smoothing functions that could result not enough accurate to model OTFTs and, in particular, transconductances and transcapacitances. In this paper we present an accurate and computationally efficient closed-form approximation of the surface potential, based on the Lagrange Reversion Theorem, that can be exploited in advanced surface-potential-based OTFTs and TFTs device models. (C) 2015 Elsevier Ltd. All rights reserved.