화학공학소재연구정보센터
Solid-State Electronics, Vol.114, 163-166, 2015
Maximizing the value of gate capacitance in field-effect devices using an organic interface layer
Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq(3)). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (similar to 100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias. (C) 2015 Elsevier Ltd. All rights reserved.