We report the fabrication and the characterization of tunnel FETs fabricated on SiGe-On-Insulator with a High-kappa Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on I-D(V-G) characteristics is presented and analyzed: compressive Si0.75Ge0.25 enables to increase by a factor of 25 the saturation currents, even at small gate length (L-G = 50 nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). (C) 2015 Elsevier Ltd. All rights reserved.