The junctionless field-effect transistors (JLFETs) have shown potential to scale down in sub-10 nm regime due to simplified fabrication process and less short-channel effects (SCEs), however, sensitivity towards process parameter variation is a major concern. Therefore, in this paper, sensitivity towards temperature variation of recently proposed dopingless (DL) double-gate field-effect transistor (DGFET) and JL-DGFET is reported. Different digital and analog performance metrics were considered and compared for both devices of similar geometries. We observed that the drive current of DL-DGFET decreases with temperature, while, it increases in JL-DGFET because both devices are affected by different scattering mechanisms at higher temperature. The variation in ION and IOFF in DL-DGFET are only 0.095 mu A/K and 0.2 nA/K, respectively, while, in JL-DGFET the changes are 0.25 mu A/K and 0.34 nA/K, respectively, above room temperature. Below room temperature, it was found that the incomplete ionization effect in JL-DGFET severely affects the drive current, however, DL-DGFET remains unaffected. Hence, the proposed DL-DGFET is less sensitive towards temperature variation and can be employed for cryogenics to high temperature applications. (C) 2015 Elsevier Ltd. All rights reserved.