The crystallization process of hydrogen doped In2O3:H (IOH) films is investigated with energy-dispersive X-ray diffraction measurements. At annealing temperatures between 125 and 150 degrees C crystallization of 220 nm thin films occurs within only 2 min, and the percentage of the crystalline phase does not change anymore when the temperature is raised above the crystallization temperature of 150 degrees C. Maximum electron mobilities above 100 cm(2)/Vs have been reached after crystallization. The IOH films were integrated as front contact into amorphous/crystalline silicon heterojunction cells and compared to In2O3:Sn (ITO) front contacts. Cells with ITO/IOH bilayer front contacts show a slightly lower open circuit voltage because of the a-Si:H passivation layer degradation caused by the longer annealing process needed for the crystallization of the bilayers, while all cells reach total area efficiencies around 20%. IOH films were also implemented as silver free back contact for mu c-Si:H cells, and show higher short-circuit current densities than ZnO:Al back contacts because of the higher near-infra-red transmission of IOH. (C) 2015 Elsevier B.V. All rights reserved.