Fabrication of highly oriented Y doped BaZrO3 (Ba(Zr,Y)O-3:BZY) films on YBa2Cu3Ox (YBCO) sacrificial buffer layerswas investigated. To clarify requirements of orientation control, BZY films were fabricated on various substrates using pulsed laser deposition (PLD). Cube-on-cube orientation relationship was obtained in BZY films on SrTiO3, LaAlO3, and MgO(100) regardless of PLD conditions, but orientation of BZY was strongly dependent on PLD conditions on yttria stabilized zirconia(YSZ) and CeO2(100), showing that perovskite structure or almost the same lattice parameter as BZY is needed to obtain cube-on-cube orientated BZY films. Cube-on-cube orientated BZY films were fabricated on YBCO, whose structure was perovskite, under wide ranging PLD conditions, showing that YBCO sufficiently controls crystalline orientation of BZY films. In addition, highly oriented BZY films were obtained on YBCO/YSZ/Si(100), demonstrating epitaxial BZY films on Si. Since good selective etching ability is also needed in sacrificial buffers, YBCO/BZY films were etched using H3PO4 center dot H3PO4 etching removed the YBCO sacrificial buffers without damaging BZY with etching rate of similar to 30 nm/s. The present results show that YBCO sacrificial buffer layers are promising for fabrication of the mu SOFCs with highly oriented BZY. (C) 2015 Elsevier B.V. All rights reserved.