Thin Solid Films, Vol.599, 133-137, 2016
Growth of {110}-one-axis-oriented perovskite-type oxide films using self-aligned epitaxial (101)PdO//(111) Pd double layers
Self-aligned (101)-one-axis-oriented PdO layerwas obtained on (111) Pd films prepared on (111) Pt/TiOx/SiO2/Si [abbreviated as (111)Pt/Si] substrates by the heat treatment at 750 degrees C under atmospheric oxygen flow. Films with (110)(c)-oriented SrRuO(3)with perovskite structurewere successfully deposited at 500 degrees C on a (101)-oriented PdO layer by an RF magnetron sputtering method due to their relatively small lattice mismatch. A (101)-oriented Sr(Zr0.8Y0.2)O3-delta (SZYO) film can be successfully prepared on (110)(c)-oriented SrRuO3 and its proton conductivity is almost the same as that of (111)(c)-oriented SZYO but slightly smaller than that of (111)(c)-oriented one. As the conductivity is strongly affected by the film crystallinity, we can conclude that the newly fabricated (110)(c)-oriented SZYO has almost the same crystallinity comparing to the films with other orientation. We have successfully demonstrated that the use of (101)PdO//(111) Pd double layer is a good candidate to grow {110}-one-axis-oriented perovskite thin films on Si substrates. (C) 2015 Published by Elsevier B.V.
Keywords:(110)-oriented perovskite thin film;(101)PdO//Pd double layer;{110}-one-axis-oriented Sr(Zr0.8Y0.2)O3-delta