Strontium titanate (SrTiO3), a typical wide-band-gap perovskite oxide, is a promising candidate for the application of thin film transistor (TFT). In this paper, the LaxSr1-xTiO3 thin films with different doping concentration are fabricated by sol-gel method. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), UV-Vis-NIR transmission spectroscopy and four point probe instrument are employed to characterize the crystal structure, surface profile, transmittance and resistivity of LaxSr1-xTiO3 thin films. The results showthat LaxSr1-xTiO3 (x = 0.5 at.%, 1 at.%, 1.5 at.%, 2 at.%, 4 at.%, 6 at.%, 8 at.%, 10 at.%) thin films are single SrTiO3 cubic phase after La doping. Additionally, the SEM and AFM observation reveal dense grains and smooth surfaceLa(x)Sr(1-x)TiO(3) film possesses high transmittance in visible region. The conductivity of LaxSr1-xTiO3 thin films is improved tremendously after La doping. The resistivity of La0.04Sr0.96TiO3 is 11.7 x 10 (3)Omega.cm and its transmittance is 88.66%. (C) 2016 Elsevier B.V. All rights reserved.