Pyroelectric Pb(Zr0.52Ti0.48)O-3 films have been grown by sol-gel process on Si(001). Intrinsic pyroelectric coefficient has been measured through ferroelectric loops recorded at different temperatures and is about -300 mu C/m(2)K. Corresponding converted pyroelectric power density is estimated to be similar to 1 mW/cm(3) for a temperature variation of 10 degrees C every 6 s. Pyroelectric response of these films has been confirmed by direct measurements of the pyroelectric current with temperature variations at zero electric field. These results are of high interest for integrated thermally-sensitive devices. (C) 2015 Elsevier B.V. All rights reserved.