We report on the correlation between morphology and electronic properties of fluorinated copper phthalocyanine (F16CuPc) thin films deposited on SiO2/Si substrates at different substrate temperatures. Highly ordered films with the 200 plane spacing of d 200 = 14.3 (A) over circle is observed. Increasing the substrate temperature significantly improves the molecular ordering of F16CuPc, and the smallest FWHM was gained at a substrate temperature of 120 degrees C. The mobility is strongly dependent on the substrate temperature. Increasing in grain size at higher substrate temperatures improves the mobility of F16CuPc TFTs, but gaps generated between grains degrade the performance of F16CuPc TFTs at a substrate temperature higher than 110 degrees C. When deposition of F16CuPc is done at a substrate temperature of 100 degrees C, the maximum mobility of 4.25 x 10(-3) cm(2)/Vs. can be obtained.