We fabricated a molecular electronic device which has a structure of Al/Al2O3/ ASA-15 LB monolayer/Ti/Al device. To study a charge transfer mechanism of molecular electronic devices, a current density-voltages (J-V) characteristics was measured at an increasing temperature range from 10K to 300K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5V) were appeared. These experimental data was fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and experimental results, it was verified that the fitting results of Simmons model about direct tunneling is fairly fitted below 0.5V at both 300K and 10 K. Hopping conduction is also dominant at all voltage range above 200K due to charges trapped by defects located within the dielectric stack, including the Al2O3, organic monolayer and Ti interfaces.