화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.471, 245-251, 2007
Surface morphology and photoluminescence of Alq(3) films grown by hot-wall method
Tris-( 8- hydroxyquinoline) aluminum ( Alq(3)) films were deposited on hydrogenterminated Si( 111) substrates changing the substrate temperature from 80 to 160 degrees C by hot- wall method. The deposited films were characterized by surface morphology and photoluminescence ( PL). With increasing substrate temperature, the emission intensity of the Alq3 films increases and the wavelength of the emission peaks shifts to lower wavelength from 528 to 507 nm. In addition, the vibronic structure with distinct five peaks was observed in the PL spectra of the films deposited at substrate temperatures of 100 and 120 degrees C.