Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.16, No.4, 281-282, 1997 DOI10.1023/A:1018544900420 Export Citation Raman Measurements on Ge Under Irradiation of 5 keV He+ Ishioka K, Nakamura KG, Kitajima M Keywords:DEFECT FORMATION;GAAS;SI Please enable JavaScript to view the comments powered by Disqus.
