ZnSe thin films were grown by a co-evaporation method with various Se/Zn flux ratios. In order to characterize ZnSe thin films, we performed an investigation that utilized X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Ultra Violet-Visible-Near InfraRed (UV-VIS-NIR) measurements of the structural, optical, and morphological properties. XRD pole-figure analysis confirmed that the orientation of the ZnSe cubic (111) plane has been widely distributed throughout the axis with respect to process conditions, flux rate of Se. It has been found that as long as the Se/Zn flux ratio is larger than 1.43, stable, single-phase, ZnSe thin films can be grown. Additional experimental data revealed that optical properties strongly depend on the substrate temperature and have correlation with crystallinity.