In this study, we used a liquid crystalline (LC) semiconductor, 8TNAT8, solutions (e.g. 0.1wt% in toluene) for forming an organic semiconductor layer by solution casting method, and fabricated field effect transistors (FETs) with top-contact/bottom-gate (TCBG) and bottom-contact/bottom-gate (BGBC) geometries. These LC semiconductors show FET characteristic properties and have high carrier mobilities of 0.08 and 0.01cm(2) V-1 s(-1) for TCBG and BCBG type FETs, respectively. We have also investigated the influence of electrode surface modification for a BCBG type FET. These results imply 8TNAT8 is a candidate for solution-processed FETs.