반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교

김재은; 이경동; 강윤묵; 이해석; 김동환; Jae Eun Kim; Kyung Dong Lee; Yoonmook Kang; Hae-Seok Lee; Donghwan Kim

Korean Journal of Materials Research, Vol.26, No.1, 47-53, January, 2016

DOI10.3740/MRSK.2016.26.1.47 Export Citation

반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교

Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical

김재은, 이경동, 강윤묵^{1, †}, 이해석^†, 김동환^†

고려대학교 신소재공학과
¹고려대학교 KU-KIST 그린스쿨

Jae Eun Kim, Kyung Dong Lee, Yoonmook Kang^{1, †}, Hae-Seok Lee^†, and Donghwan Kim^†

Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
¹KU-KIST Green School, Graduate School of Energy and Environment, Korea University, Seoul 02841, Korea

E-mail:, ,

Silicon nitride (SiNx:H) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. The passivation properties of SiNx:H are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitancevoltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

Keywords:silicon nitride;sinx:h;pecvd;passivation;reflectance

[References]

Green MA, Silicon Solar Cells Advanced Principles & Practice, p.32-54, University of New South Wales, Centre for Photovoltaic Devices and Systems, Sydney, (1995).
Lelievre JF, Fourmond E, Kaminski A, Palais O, Ballutaud D, Lemiti M, Sol. Energy Mater. Sol. Cells, 93(8), 1281 (2009)
Cuevas A, Kerr MJ, Schmdt J, 3rd World Conference on Photovoltaic Energy Conversion, (2003).
Duerinckx F, Szlufcik J, Sol. Energy Mater. Sol. Cells, 72(1-4), 231 (2002)
Dutttagupta S, Ma F, Hoex B, Mueller T, Aberle AG, Energy Procedia, 15, 78 (2012)
El Amrani A, Menous I, Mahiou L, Tadjine R, Touati A, Lefgoum A, Renew. Energy, 33(10), 2289 (2008)
Green MA, Solar Cells, p.161-164, Barbara B, Prentice-Hall, Inc., USA, (1982).
Jurzecka-Szymacha M, Boszkowicz P, Tkacz-Smiech K, Thin Solid Films, 520(4), 1308 (2011)
Moschner JD, Henze J, Schmidt J, Hezel R, Prog. Photovot: Res. Appl., 12, 21 (2004)
Wan Y, Mclntosh KR, Thomson AF, AIP Advances, 3, 032113 (2013)
Mackel H, Ludemann R, J. Appl. Phys., 92, 2602 (2002)
Lee KD, Kim YD, Dahiwale SS, Boo H, Park S, Tark SJ, Kim D, J. Korean Vac. Soc., 21, 29 (2012)
Aberle AG, Prog. Photovolt: Res. Appl., 8, 473 (2000)
Sopori BL, Deng X, Benner JP, Rohatgi A, Sana P, Estreicher SK, Park YK, Roberson MA, Sol. Energy Mater. Sol. Cells, 41-42, 159 (1996)

[Referenced By]

[1] Green MA, Silicon Solar Cells Advanced Principles & Practice, p.32-54, University of New South Wales, Centre for Photovoltaic Devices and Systems, Sydney, (1995).

[2] Lelievre JF, Fourmond E, Kaminski A, Palais O, Ballutaud D, Lemiti M, Sol. Energy Mater. Sol. Cells, 93(8), 1281 (2009)

[3] Cuevas A, Kerr MJ, Schmdt J, 3rd World Conference on Photovoltaic Energy Conversion, (2003).

[4] Duerinckx F, Szlufcik J, Sol. Energy Mater. Sol. Cells, 72(1-4), 231 (2002)

[5] Dutttagupta S, Ma F, Hoex B, Mueller T, Aberle AG, Energy Procedia, 15, 78 (2012)

[6] El Amrani A, Menous I, Mahiou L, Tadjine R, Touati A, Lefgoum A, Renew. Energy, 33(10), 2289 (2008)

[7] Green MA, Solar Cells, p.161-164, Barbara B, Prentice-Hall, Inc., USA, (1982).

[8] Jurzecka-Szymacha M, Boszkowicz P, Tkacz-Smiech K, Thin Solid Films, 520(4), 1308 (2011)

[9] Moschner JD, Henze J, Schmidt J, Hezel R, Prog. Photovot: Res. Appl., 12, 21 (2004)

[10] Wan Y, Mclntosh KR, Thomson AF, AIP Advances, 3, 032113 (2013)

[11] Mackel H, Ludemann R, J. Appl. Phys., 92, 2602 (2002)

[12] Lee KD, Kim YD, Dahiwale SS, Boo H, Park S, Tark SJ, Kim D, J. Korean Vac. Soc., 21, 29 (2012)

[13] Aberle AG, Prog. Photovolt: Res. Appl., 8, 473 (2000)

[14] Sopori BL, Deng X, Benner JP, Rohatgi A, Sana P, Estreicher SK, Park YK, Roberson MA, Sol. Energy Mater. Sol. Cells, 41-42, 159 (1996)