Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Yu ZH; Ong ZY; Pan YM; Cui Y; Xin R; Shi Y; Wang BG; Wu Y; Chen TS; Zhang YW; Zhang G; Wang XR

Advanced Materials, Vol.28, No.3, 547-547, 2016

DOI10.1002/adma.201503033 Export Citation

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Yu ZH, Ong ZY, Pan YM, Cui Y, Xin R, Shi Y, Wang BG, Wu Y, Chen TS, Zhang YW, Zhang G, Wang XR

By combining a high-kappa dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room- temperature mobility of approximate to 150 cm(2) V-1 s(-1) and room-temperature phonon-limited transport in a mono layer MoS2 transistor for the first time.