A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2-x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.