Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.17, No.18, 1545-1547, 1998 DOI10.1023/A:1006562315076 Export Citation Epitaxial growth of Si by tow-energy DC-plasma chemical vapor deposition Mateeva E, Deller HR, Kafader U, Rosenblad C, Von Kanel H, Dommann A Keywords:MOLECULAR-BEAM EPITAXY;LOW-TEMPERATURES;SILICON;SILANE;THICKNESS;SI(100);SURFACE Please enable JavaScript to view the comments powered by Disqus.
