Graphene nanosheet (GN) films on fluorinated tin oxide (FTO) are used as the counter electrode in p-type dye-sensitized solar cells. These films show unique 3D networks with enlarged effective reaction area, good adhesion to FTO, and high catalytic activity. By using the developed GN films on FTO as the counter electrode, a p-type dye-sensitized device with an open-circuit voltage of 134 mV, a short circuit of 1.90 mA cm(-2), and a fill factor of 36.37% is obtained, which is comparable to the performance of a device with a Pt counter electrode.