The lattice strain is the main factor which governs the surface morphology formation during the Si/Ge heteroepitaxial growth. Its influence becomes significantly weakened at high growth temperatures due to strong Si-Ge intermixing, giving an advantage of other factors which may produce unusual effects. We observed the formation of lateral SiGe nanowires (NWs) after Ge deposition on Si(111) at 830-860 degrees C using solid-source molecular beam epitaxy. An additional factor to the strain minimization is associated with an energy barrier for the misfit dislocation network introduction at the NW/substrate interface, which causes the NWs to be straight. However, the requirement to attain a certain SiGe composition provides the formation of winding NWs, reflecting the subtle aspects of the growth process. (C) 2016 Elsevier B.V. All rights reserved.