The ability to prepare high coverage and compact perovskite films via solution-based crystallization manipulation processes still represents a vital issue towards improving the ultimate photoelectric conversion efficiency of devices. In this work, we prepare the active perovskite layer by means of sequential deposition crystallization process i.e. dipping PbI2-infiltrated TiO2 film within CH3NH3I solution from 20s to 60s. The morphology and thickness of the as-prepared perovskite layer, and its overall performance superiority are investigated. X-ray diffraction (XRD) reveals that a maximum conversion of PbI2 to perovskite is completed upon applying a sequential deposition crystallization process of 40s. Field emission scanning electron microscope (FESEM) demonstrates that the coverage of the perovskite capping layer exhibits a trend from rise to decline in the whole dipping time from 20s to 60s. By fine control of the dipping time, a 620 nm-thickness compact perovskite active layer is obtained at the optimized dipping, time of 40s and is verified to possess strong light absorption and high electron extraction efficiency, leading to a higher photocurrent. By further optimizing the mesoporous TiO2 film thickness, a high photocurrent of 23.98 mA cm(-2) and an efficiency of 13.47% are achieved. (C) 2016 Elsevier B.V. All rights reserved.