Photoluminescence up to 2.25 mu m wavelength is demonstrated from Ge nanopillars strained by silicon nitride stressor layers. Tensile biaxial equivalent strains of up to similar to 1.35% and similar to 0.9% are shown from 200 x 200 nm, and 300 x 300 nm square top Ge pillars respectively. Strain in the latter is confirmed by Raman spectroscopy, and supported by finite element modelling, which gives an insight into the strain distribution and its effect on the band structure, in pillar structures fully coated by silicon nitride stressor layers. (C) 2015 Elsevier B.V. All rights reserved.