Fabrication, characterizations, and modeling of three-dimensional high-inductance value toroidal inductors are presented. The effect of substrate and number of turns on toroidal inductors with 16, 31, and 62 turn fabricated using prestressed metals are investigated. A 62-turn inductor on high-resistivity Si substrate has an inductance value of 81 nH, a self-resonance frequency of similar to 2 GHz, and a peak quality factor (Q) of similar to 10. It is found that the substrate loss is detrimental to the quality factor of toroidal inductors at high frequencies and should be suppressed by using high-resistivity substrate or SU-8 coated Si substrate in order to obtain high values of the quality factor. In addition, reducing turn-to-turn gap in toroidal inductors results in higher mutual couplings among the inductor turns and thus achieving high-inductance values. Integrated high-inductance value, high-Q inductors can be used in integrated switching power supplies, radio frequency (rf) and intermediate frequency filters, energy conversion circuits, and as on-chip rf chokes in rf integrated circuits. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3474985]