Interferometric lithography was used to create a wide variety of two-dimensional and three-dimensional patterns in standard photoresist. The patterns were then converted to amorphous carbon structures through pyrolysis in a reducing atmosphere. The structures maintain their fundamental in-plane morphology despite undergoing significant shrinkage. As an indication of their functionality, the authors highlight their use in two diverse applications: (1) as a defect reduction mask in metal-organic chemical vapor deposition growth of gallium nitride (GaN) on sapphire and (2) as a nanoparticle decorated electrode for catalytic oxidation of methanol. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3495756]