Reflective electron beam litography (REBL) utilizes several novel technologies to generate and expose lithographic patterns at throughputs that could make ebeam maskless lithography feasible for high volume manufacturing. The REBL program was described in a previous article [P. Petric et al., J. Vac. Sci. Technol. B 27, 161 (2009)] 2 years ago. This article will review the system architecture and the progress of REBL in the past 2 years. The main technologies making REBL unique are the reflective electron optics, the rotary stage, and the dynamic pattern generator (DPG). Changes in how these concepts have been implemented in a new design will be discussed. The main disadvantage of today's electron beam direct write is low throughput; it takes many tens of hours to expose a 300 mm wafer today using ebeam lithography. The projected system throughput performance with the integrated technology of the reflective optics, DPG, and a multiple wafer rotary stage will be shown incorporating the performance data for the new column design. (c) 2010 American Vacuum Society. [DOI: 10.1116/1.3511436]