The functionalization of graphene, which deforms its band structure, can result in a metal-semiconductor transition. In this work, we report a facile strategy to oxidize single-layer graphene using an atmospheric pressure plasma jet (APPJ) that generates a variety of reactive plasma species at close to ambient temperature. We systematically characterized the oxygen content and chemical structure of the graphene films after plasma treatment under different oxidative conditions (ambient air atmosphere or hydrogen peroxide solution) by X-ray Photoelectron Spectroscopy (XPS). Plasma-treated graphene films containing more than 40% oxygen were obtained in both oxidative environments. Interestingly, prolonged irradiation led to the reduction of graphene oxides. N-doping of graphene also occurred during the APPJ treatment in H2O2 solution; the nitrogen content of the doped graphene was dependent on the duration of irradiation and reached up to 8.1% within 40 min. Moreover, the H2O2 solution served as a buffer layer that prevented damage to the graphene during plasma irradiation. Four-point probe measurement revealed an increase in sheet resistance of the plasma-treated graphene, indicating the transition of the material property from semi-metallic to semiconducting. (C) 2016 Elsevier B.V. All rights reserved.